RA55H3340M是55-watt RF的MOSFET放大器模块12.5-volt移动电台在向工作在330-400-MHz范围.电池可以直接连接到漏极增强型MOSFET晶体管.如果没有门电压(VGG进入=0V),只有一小漏电流漏极和RF衰减输入信号的最高60 dB.输出功率和漏电流增加门极电压增加.与周围4V栅极电压（最小），输出功率和漏电流大幅增加.标称输出功率变在4.5V（典型值），5V可用（最大）.在VGG=5V,的典型栅极电流1 mA.该模块是专为非线性调频调制，但也可能是线性调制使用设置排水静态电流与栅极电压和控制输出功率与输入功率.

特征
•增强型MOSFET晶体管(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>55W,ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
•宽带频率范围：330-400MHz
•低功耗控制电流IGG=1mA (typ)在VGG=5V
•模块尺寸：66 x 21 x 9.88 mm
•线性操作有可能通过设置静态漏电流随栅极电压和输出功率控制与输入功率.
RA55H3340M： Silicon RF Power Modules RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES
• Enhancement- Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA55H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER： RA55H3340M-101
SUPPLY FORM： Antistatic tray,10 modules/tray