该RA13H1317M是13-watt RF的MOSFET放大器模块for 12.5-volt,在135-经营移动收音机175-MHz范围.电池可以直接连接到漏极增强型MOSFET晶体管.如果没有门电压(VGG进排水=0V),只是一个很小的泄漏电流与输入信号衰减的RF高达60 dB.输出功率作为栅极和漏极电压增加电流增加.随着gate voltage around 4V (minimum), output power and drain current大幅增加.额定输出功率变为可在4.5V(典型值)和5V(最大).在VGG=5V,典型栅极电流1 mA.该模块是专为非线性调频调制,但可能也可用于线性调制通过设置静态漏电流随栅极电压和输出功率控制输入功率.
The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
• Enhancement-Mode MOSFET Transistors(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>13W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175 MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power RoHS COMPLIANCE
• RA13H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
三菱(MITSUBISHI):HF/VHF/UHF/900MHz(分立MOSFET管)
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